Signals and Noise
Many electronic products have performance requirements that are degraded by noise. As technology is pushed to
the limits of precision, repeatability, and speed, the effects of electronic noise bound product performance. For example, high-seed data communications
physical-layer performance is bound by the communications channel signal-to-noise ratio (SNR). Examples of noise-limited measurement applications
include all sensors and transducers (temperature, position, field, force, sound, etc). The sensor or transducer signal fidelity and information are obscured
by noise, limiting the signal quality and ultimate utility of the information. The understanding of noise sources, types of noise, noise characteristics, noise
mathematical relationships, noise modeling and system performance prediction are paramount to successful high-technology product development.
Extrinsic and Intrinsic Sources of Noise
Noise sources are either extrinsic or intrinsic to an electronic product or circuit. Extrinsic noise sources will
radiate noise that is unintentionally received by susceptible circuitry. Extrinsic noise sources include electro-magnetic (E-M) field noise known generally as
Electromagnetic Interference (EMI). EMI can be further classified as near-field or far-field E-M noise dependent upon the distance from the noise source to the
noise receiver. The significance will be explained in a moment. First, near field is defined as a source-receiver distance of less than λ/(2π), whereas a far field is defined as a source-receiver distance of greater than λ/(2π).
Near-field E-M has wave impedance that is characteristic of the source; electric field (E) or magnetic field (H). Electric field dominated waves in the near field have
impedance > 377 ohms. Magnetic field dominated waves in the near field have impedance < 377 ohms. The so called, uniform plane waves are far-field transverse E-M waves where the impedance converges to 377 ohms (the intrinsic impedance of free space). Knowledge of the noise source impedance and distance to the noise source suggest noise mitigation techniques. For example, magnetic field noise sources are high-current loops. These loop areas must be closed and/or the circulating current reduced to reduce the noise source power. Electric field noise sources are typically dipole antennas – so mitigation relies on decreasing the
antenna radiation effectiveness and/or voltage.
Noise can also be extrinsically coupled into susceptible circuits via cable crosstalk. Here, the
electric-field crosstalk component is coupled from aggressor cables to victim cables by distributed
capacitance. The magnetic-field crosstalk component is coupled from aggressor cables to victim cables by
distributed mutual inductance. Near-end crosstalk (also known as backwards crosstalk) is related to the sum of
the electric-field and magnetic field coupling components, whereas far-end crosstalk (forward
crosstalk) is proportional to the electric field component minus the magnetic field component.
Intrinsic (also known as inherent) noise in electronic circuits arises from random signals due to fundamental properties
of circuits, and generated by resistors and semiconductors. Examples of intrinsic noise are thermal
(or Johnson, white) noise in resistors and semiconductors, shot noise and flicker noise (also known as 1/f noise) in semiconductors.
Noise Spectral Density
Noise can be characterized by its spectral shape. White noise is flat or constant over frequency. Noise with
1/f spectral shape is also shown in the NSD plots below:
Noise-Source Correlation and Summation
Two noise voltages in series or two noise currents in parallel add according to,
;
where all voltages are in rms, and
C is the correlation coefficient
When noises are random in nature, and not correlated to other signals, the correlation coefficient,
C = 0 and the noise sum of the individual noise contributors is equal to,
; where all voltages are in rms
This is valid for flat noise spectral density (NSD) across the frequency band of interest. If the NSD is
not flat over frequency, then the noise sum is obtained by squaring the summing the individual NSDs over the
frequency band of interest. NSD is the average normalized noise power over a 1 Hz bandwidth. For
voltage noise sources, Vn is in units of V2/√Hz. For current noise sources, In is in units of A2/√Hz.
Either voltage noise or current noise can be expressed in relative dB, referred to as dBm. (The m designation refers to measured (in this case calculated) with respect to a reference)
;
where Vn is the noise voltage in rms and Vr is the rms reference voltage
Common 0 dBm reference voltages are,
|
Vr (Vrms) |
Reference R (Ω) |
|
0.224 |
50 |
|
0.274 |
75 |
|
0.316 |
100 |
|
0.775 |
600 |
A few interesting noise summations are shown in the following table:
|
Vn1 |
Vn2 |
C |
Vn |
|
0 dBm |
0 dBm |
0 |
+3 dBm |
|
0 dBm |
0 dBm |
+1 (in phase) |
+6 dBm |
|
0 dBm |
0 dBm |
-1 (out of
phase) |
-∞ dBm |
Two signals are perfectly correlated if they are sine waves of the same frequency with relative phase 0° (C = +1) or
relative phase 180° (C = -1). For C = +1, the two sinusoidal signals add linearly in voltage. For C = -1,
the two sinusoidal signals subtract linearly in voltage.
Noise Bandwidth and Noise Power
Noise power is dependant upon the noise source spectrum and the noise bandwidth. Sinusoidal noise sources have noise power
concentrated at the sinusoidal frequency, ideally with zero bandwidth.
Random noise sources have power spectrum spread across the frequency band, as was shown above for white and 1/f
noise.
The Vrms noise power over a frequency band, f1 to f2 is,

The Irms noise power over a frequency band f1 to f2 is,

System performance can often be improved by careful noise band shaping and band limiting in general.
The simple RC low-pass filter has a signal bandwidth of,

yet, this same filter
has a noise bandwidth of,

This noise bandwidth is the bandwidth of an equivalent
brick-wall low-pass filter applied to a white noise
source.
A
white-noise source measured with low-pass noise filter
with corner frequency, fcnoise, yields a Vrms
noise power of,

Also note, in terms of spectral density, band limiting
is simply the NSD multiplied by the noise bandwidth,

Total noise power can be easily calculated in dBm for
flat NSD (or nearly flat NSD) without integration by
noting,
;where B is the noise bandwidth
The table below shows a few interesting (flat NSD)
examples,
|
NSD (dBm/√Hz) |
B (Hz) |
Pnoise (dBm) |
Comment |
|
0 |
1 |
0 |
Definition of
NSD (or “spot” noise in a spectrum analyzer |
|
0 |
10 |
10 |
|
|
0 |
100 |
20 |
|
Modeling and Prediction
The above tools can be used to perform noise modeling and predict noise-limited system performance.
An example from an actual product design is shown below. This is a receive path for a high-performance signal-processing
device. The noise performance for each block and the noise interactions between blocks is modeled to
predict overall product performance. In some blocks,
digitally programmable gain could be enabled, so the
optimum gain selection is desired for overall
performance. The signal processing chain begins with a
summing amplifier, then proceeds to High-Pass Filter
stage 1 (HPF1), then proceeds to High-Pass Filter stage
2 (HPF2), then proceeds to the Equalizer (EQ), and
finally digitized by a 14-bit ADC.

Consider each real (noisy) block above being comprised
of an ideal noise-free function (e.g. noise-free summing
amp, noise-free high-pass filter, etc) proceeded by a
input noise voltage generator to emulate the noise of
the block input stage, and followed by a output noise
voltage generator to emulate the noise of the block
output stage. All noise sources are considered
uncorrelated in this analysis since they are generated
by random processes.

Generally, Vi is multiplied by the ideal noise-free
block gain, whereas Vo, being considered the
output-stage voltage noise is not multiplied by the
ideal noise-free block gain to any appreciable extent.
Replacing the real bock with ideal noise-free blocks
with input and output noise sources yields,

Since these noise voltage generators are in series, they
can be combined as,

The
last step clarifies the noise summation process,

The
noise power at Pn can be readily calculated for any
value of gain for G1, G2, G3, G4, and G5. Note that G5
represents the ADC transfer function gain from volts in
to digital word out. Also, note that N6 includes the
ADC quantization noise. Shaped spectra or flat noise
spectra can be analyzed with this approach. The
following shows the simplified case where the NSD is
relatively flat.
When N is expressed in dBm, and G is in dB, and the
uncorrelated power sum operator,
is defined as,
 The
total power at Pn (dBm) is,
 Since the signal path gain is known, Gs = G1 + G2 + G3
+ G4 + G5, (all gains in cascade in dB add
algebraically) and injecting the input signal S1
into G1, the output signal power from G5 is,
PsdBm
= S1+Gs
The (noise-limited) performance signal-to-noise, SNRdBm
at G5 output is,
SNRdB
= PsdBm - PndBm
Conclusion
The performance of lead-edge electronic products is often limited by electronic noise. Electronic noise sources
can be extrinsic or intrinsic to the product electronic circuitry. The electronic noises can be correlated or
non-correlated. Random noises (generated by random processes) are uncorrelated, and have noise-power spread
across frequency. Random noise can often be characterized by its frequency-domain spectra (as well
as the physical mechanism generating the noise) characteristics. The noise-power spectral density (NSD)
and wideband power can be calculated for use in product-level modeling and predictive performance analysis.
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